View APTM120UM70FAG_1212629.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTM120UM70FAG
Single switch MOSFET Power Module
SK S D
VDSS = 1200V RDSon = 70m typ @ Tj = 25C ID = 171A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
G
DK
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTM120UM70FAG Rev 1
July, 2006
Max ratings 1200 171 126 684 30 80 5000 24 50 3200
Unit V A V m W A
APTM120UM70FAG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 85.5A VGS = VDS, ID = 30mA VGS = 30 V, VDS = 0V
70 3
Max 1.5 6 80 5 600
Unit mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 171A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 171A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 171A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 171A, R G = 0.8
Min
Typ 43.5 6.6 1.2 1650 192 1074 20 17 245 62 7.6 6.9 13.8 8.5
Max
Unit nF
nC
ns
mJ
mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 171A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 12 54
IS = - 171A VR = 600V diS/dt = 600A/s
Max 171 126 1.3 18 375 860
Unit A V V/ns ns C
July, 2006 2-6 APTM120UM70FAG Rev 1
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 171A di/dt 700A/s VR VDSS Tj 150C
www.microsemi.com
APTM120UM70FAG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.025 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTM120UM70FAG Rev 1
July, 2006
APTM120UM70FAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.03 Thermal Impedance (C/W) 0.025 0.02 0.015 0.01 0.005 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 420 I D, Drain Current (A) ID, Drain Current (A) 360 300 240 180 120 60 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 85.5A 4.5V 6V 5.5V VGS =15, 10V 7V
Transfert Characteristics 480 420 360 300 240 180 120 60 0 0 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 135 90 45 0 30
TJ=125C T J=-55C T J=25C
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
5V
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V V GS=20V
60
120
180
240
300
360
25
50
75
100
125
150
July, 2006 4-6 APTM120UM70FAG Rev 1
ID, Drain Current (A)
TC, Case Temperature (C)
www.microsemi.com
APTM120UM70FAG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 420 840 1260 1680 2100 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=85.5A
1000
limited by RDS on 100s
100
1ms 10ms
10
Single pulse TJ=150C TC=25C 1 1200 10 100 1000 VDS, Drain to Source Voltage (V)
1
Gate Charge vs Gate to Source Voltage ID=171A TJ=25C
VDS=240V VDS=600V VDS=960V
10000
Coss
Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
www.microsemi.com
5-6
APTM120UM70FAG Rev 1
APTM120UM70FAG
Delay Times vs Current 300 td(on) and td(off) (ns) 250 200 150 100 50 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Current 24 36
V DS =800V RG =0.8 T J=125C L=100H VDS=800V RG=0.8 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=0.8 T J=125C L=100H
tf
tr and tf (ns)
60 40 20 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) tr
td(on)
Switching Energy vs Gate Resistance
V DS=800V ID=171A T J=125C L=100H
Switching Energy (mJ)
20 16 12 8 4 0 60
Switching Energy (mJ)
Eon Eoff
30 24 18 12 6
Eoff
Eon Eoff
90
120 150 180 210 240 270 ID, Drain Current (A)
0
1
2
3
4
5
6
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
Operating Frequency vs Drain Current 150
ZVS Hard switching VDS=800V D=50% RG=0.8 T J=125C T C=75C ZCS
IDR, Reverse Drain Current (A)
175
1000
T J=150C
Frequency (kHz)
125 100 75 50 25 0 40
100
T J=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
60
80 100 120 140 ID, Drain Current (A)
160
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6-6
APTM120UM70FAG Rev 1

▲Up To Search▲

Price & Availability of APTM120UM70FAG

	To Download APTM120UM70FAG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .